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Q.

A p-n photo diode is fabricated from a semiconductor with a bandgap of 5eV. It can detect a signal of wavelength

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a

$4960 A^{0}$

b

$6000 A^{0}$

c

$2480 A^{0}$

d

$2000 A^{0}$

answer is B.

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Detailed Solution

$W a v e l e n g t h : λ = \frac{12400}{E (i n e v)} \overset{o}{A} = \frac{12400}{5} = 2480 \overset{o}{A}$

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