A semiconductor X is made by doping a germanium crystal with arsenic (Z=33).A second semiconductor Y is made by doping germanium with indium (Z:= 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

Arsenic has five valence electrons, so it is a donor impurity. Hence X becomes n-type semiconductor. Indium has only three outer electrons, so it is an acceptor impurity. Hence Y becomes p-type semiconductor. Also n (i.e., X) is connected to the positive terminal of battery and p (i.e.,Y) is connected to the negative terminal of battery. So p-n junction is reverse biased