Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to e−ΔE/2KT . Here ΔE = energy gap and k=8.62×10−5 eV / kelvin The energy gap for silicon is 1.1eV. The ratio of electron hole pairs at 300K and 400 K is :

N1N2=e−ΔE/2KT1e−ΔE/2KT2=eΔE2K1T2−1T1=1.1e2×8.62×10−51400−1300

Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to e−ΔE/2KT . Here ΔE = energy gap and k=8.62×10−5 eV / kelvin The energy gap for silicon is 1.1eV. The ratio of electron hole pairs at 300K and 400 K is :

N1N2=e−ΔE/2KT1e−ΔE/2KT2=eΔE2K1T2−1T1=1.1e2×8.62×10−51400−1300

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Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to $e^{- ΔE / 2 KT}$ . Here $ΔE$ = energy gap and $k = 8 .62 \times 10^{- 5}$ eV / kelvin The energy gap for silicon is 1.1eV. The ratio of electron hole pairs at 300K and 400 K is :

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$\begin{array}{l} \frac{N_{1}}{N_{2}} = \frac{e^{- ΔE / 2 {KT}_{1}}}{e^{- ΔE / 2 {KT}_{2}}} \\ = e^{\frac{ΔE}{2 K} (\frac{1}{T_{2}} - \frac{1}{T_{1}})} = \frac{1 .1}{e^{2 \times 8 .62 \times 10^{- 5}}} (\frac{1}{400} - \frac{1}{300}) \end{array}$

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Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to e−ΔE/2KT . Here ΔE = energy gap and k=8.62×10−5 eV / kelvin The energy gap for silicon is 1.1eV. The ratio of electron hole pairs at 300K and 400 K is :

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Assume that the number of hole-electron pair in an intrinsic semiconductor is proportional to $e^{- ΔE / 2 KT}$ . Here $ΔE$ = energy gap and $k = 8 .62 \times 10^{- 5}$ eV / kelvin The energy gap for silicon is 1.1eV. The ratio of electron hole pairs at 300K and 400 K is :