Consider a p-n junction as a capacitor, formed with p and n  materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that a n-p-n transistor is working as an amplifier in CE configuration. If C₁ and C₂ are the base-emitter and collector- emitter junction capacities then

• Here, a CE-configured n-p-n transistor is acting as an amplifier. 
• This results in the first junction n-p being forward biassed and the second junction p-n being reverse biassed. 
• The forward and reverse voltages affect the separation between the plates (the depletion region). 
• Their capacitances $C_1$ and $C_2$ are therefore voltage-dependent.

Hence the correct answer is $C_1>C_2$.