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Consider the following statements A and B and identify the correct choice of the given answers.
A. The width of the depletion layer in a P-N junction diode increases in forward bias.
B. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap.

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An Intiative by Sri Chaitanya

A is true and B is false

Both A and B are false

Both A and B are true

A is false and B is true

answer is C.

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Detailed Solution

In forward biasing of PN junction diode, width of depletion layer decreases. In intrinsic semiconductor, fermi energy level is exactly in the middle of the forbidden gap

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