In a p - n junction diode the thickness of depletion layer is 2 ×10^–6m and barrier potential is 0.3 V. The intensity of the electric field at the junction is :

Given,

Potential barrier $=V=0.3volts$

The thickness of depletion layer = $d=2\times {10}^{-6}m$

The intensity of the electric field at the junction = $E=\frac{V}{d}$

$$\begin{gathered} E=\frac{0.3}{2\times {10}^{-6}} \\ E=1.5\times {10}^{5}V{m}^{-1} \end{gathered}$$

From n to p side.

Hence the correct answer is $1.5\times {10}^{5}V{m}^{-1}$ from n to p side.