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In a p-n junction diode the thickness of deplection layer is 2x10^-6m and barrier potential is 0.3V. The intensity of the electrical field at the junction is

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1.5x10⁵Vm^-1 from n to p side

1.5x10⁵Vm-1 from p to n side

0.6x10^-6Vm^-1 from n to p side

0.6x10^-6Vm^-1 from p to n side

answer is C.

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Detailed Solution

$E = \frac{v}{d} = \frac{0 .3}{2 \times 10^{- 6}} = 1 .5 \times 10^{5} {Vm}^{- 1}$
Its direction from n to p side.

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