In a p-n junction diode, the thickness of depletion layer is $2\times {10}^{-6}\text{\hspace{0.17em}m}$ and barrier potential is 0.3 V. The intensity of the electric field at the junction is

Here, the barrier voltage, V = 0.3 volt and the width of depletion layer,  $\mathrm{d}=2\times {10}^{-6}\mathrm{m}$
Electric field at the junction,
 $E=\frac{V}{d}=\frac{0.3V}{2\times {10}^{-6}m}=1.5\times {10}^{5}V/m$
The direction of electric field is from n-type to p-type.