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In n-p-n transistor, in CE configuration
            (a) The emitter is heavily doped than the collector
            (b) Emitter and collector can be interchanged
            (c) The base region is very thin but is heavily doped
            (d) The conventional current flows from base to emitter

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only (b) and (c) are correct

only (a) and (b) are correct

only (a) and (c) are correct

only (a) and (d) are correct

answer is C.

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Detailed Solution

In a transistor, the emitter has to be heavily doped, base must be sparingly doped and collector must be moderately doped and also have a large area. so it is not possible to interchange collector and emitter.

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In n-p-n transistor, in CE configuration (a) The emitter is heavily doped than the collector (b) Emitter and collector can be interchanged (c) The base region is very thin but is heavily doped (d) The conventional current flows from base to emitter