Note:

If your answer is options 2,4 Then you have to fill the OMR sheet as ‘24’
If your answer is options 1,3,4 Then you have to fill the OMR sheet as ‘134’
 

 

The breakdown in a reverse biased p-n junction is more likely to occur due to
1) large velocity of the minority charge carriers if the doping concentration is small
2) large velocity of the minority charge carriers if the doping concentration is large
3) strong electric field in a depletion region if the doping concentration is small
4) strong electric field in the depletion region if the doping concentration is large