Note :
if yous answer is options 1,3,4 then you have to fill the Answer as ‘134’
If your answer is options 2, 4 then you have to fill the answer as '24'
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are
1) Drift in forward bias, diffusion in reverse bias
2) Diffusion in forward bias, drift in reverse bias
3) Diffusion in both forward and reverse bias
4) Drift in both forward and reverse bias

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answer is 2.

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Detailed Solution

In PN− junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the function, when reverse biased. The reverse bias opposes the majority carriers but makes the minority carriers to cross the PN− junction. Thus, the small current in μA flows during reverse bias.

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