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Q.

Of the following statements about a p-n-p transistor, which is correct ?

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a

The semi conductor material used to make the emitter may have been doped with arsenic

b

Most of the current carriers in the collector and emitter are holes from donor impurities

c

The emitter junction is forward biased

d

Both 2 and 3

answer is D.

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Detailed Solution

In a p-n-p transistor, majority current carriers are holes from donor impurities in the collector and emitter and the emitter junction is forward biased. The base is connected with the positive terminal of the battery and the emitter is connected to the positive terminal of the battery.

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