Statement – I : When a Si sample is doped with Boron, it becomes p – type and when doped by Arsenic it becomes n – type semiconductor such that p – type has excess holes and n – type has excess electrons.

Statement – II : If p type and n – type semiconductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.

P-type semiconductors are formed when semiconductor is dopped with trivalent atoms and n-type semiconductors are formed when semiconductor is dopped with pentavalent atoms. Boron is trivalent and Arsenic is pentavalent atoms.

Statement – I is correct.

When P – N junction is formed an electric field is generated from N – side to P – side due to which barrier potential arises and majority charge carrier cannot flow through the junction due to barrier potential so current is zero unless we apply forward bias voltage.

Statement - II is incorrect.