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Q.

The I-V characteristic of a P-N junction diode is shown below. when a forward bias of 2 V is applied, the approximate dynamic resistance of the P-N junction is
 

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a

5 Ω

b

0.25 Ω

c

0.5 Ω

d

1 Ω

answer is B.

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Detailed Solution

The current at 2V is 400 mA and at 2.1 V it is 800 mA. The dynamic resistance in this region 
R=ΔVΔi=(2.1−2)(800−400)×10−3=14=0.25Ω

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