The width of depletion layer is a p-n junction decreases due to

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both (1) and (2) are correct.

decrease in dope concentration.

increase in dope concentration

reverse biasing of p-n junction

answer is C.

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Detailed Solution

Due to increase in dope concentration number of free electrons in the n-region and number of holes in the p-region near the interface of p and n regions increases. Due to this recombination of electron and holes take place in a very narrow region near the interface. As a result thickness of depletion layer decreases.

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