The width of forbidden gap in Silicon crystal is 1.1 eV. When the crystal is converted into p-type semiconductor, the distance of fermi level from conduction band is

          

For pure or intrinsic semiconductor Fermi level lies exactly in the middle of forbidden gap. But for a p-type semiconductor as the no. of holes increases Fermi level shifts towards valence band. So distance of the Fermi level from the conduction band increases. So it is more than half i.e. more than 0.55 eV