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Q.

What will be conductivity of pure silicon crystal at 300K temperature. If electron hole pairs per $c m^{3}$ is 1.072 x $10^{10}$ at this temperature,mobility of electron $μ_{e}$ = 1350 $c m^{2}$ / volt·s and mobility of hole $μ_{h}$ = 480 $c m^{2}$ /volt-s :-

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a

$10^{- 6}$ mho/cm

b

3.14 x $10^{- 6}$ mho/cm

c

3 x $10^{6}$ mho/cm

d

$10^{6}$ mho/cm

answer is A.

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Detailed Solution

for an intrinsic semiconductor conductivity $σ = n (μ_{e} + μ_{h}) e$ where n is number of hole electron pair per unit volume

$σ = 1.072 \times 10^{10} \times (1350 + 480) \times 1.6 \times 10^{- 19}$ = $3.14 \times 10^{- 6}$

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What will be conductivity of pure silicon crystal at 300K temperature. If electron hole pairs percm3is 1.072 x1010 at this temperature,mobility of electron μe = 1350 cm2/ volt·s and mobility of hole μh= 480 cm2/volt-s :-