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Q.

When a pn junction diode is forward biased, energy is released at the junction due to the recombination of electrons and holes. This energy is in

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a

visible region

b

infrared region

c

UV region

d

X-ray region

answer is B.

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Detailed Solution

If pn junction diode is made from germanium or silicon, the energy released due to recombination of free electrons and holes is in the infrared region. However if the pn junction diode is made from gallium arsenide or indium phosphide, then the energy released due to recombination of free electrons and holes is in the visible region.

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