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Q.

When P-N junction diode is forward - biased, then

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a

both the depletion region and barrier height are reduced

b

both the depletion region and barrier height are increased

c

the depletion region is reduced and barrier height is increased

d

the depletion region is widened and barrier height is reduced

answer is C.

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Detailed Solution

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A P-N junction is forward bias its P end is connected to positive terminal of battery while N end is connected to negative terminal of a battery. Under this condition, a greater number of electrons go from N-region to P-region and a greater number of holes go from P-region to N-region. Therefore, major current due to both types of carriers takes place through the junction. This causes a reduction in the height of depletion region. Moreover, the barrier potential is also reduced.

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