When p-n junction diode is forward biased

A p-n junction is said to be forward biased when the p side of the junction is connected to the positive terminal and n side is connected to the negative terminal of the external source. This causes the holes as well as the electrons to migrate towards the junction from the p and n regions respectively. As they come closer and closer, the width of the depletion layer decreases. The distance between the diffused electrons and holes start to get reduced and this causes a decrease in the electric field in the depletion area. Thus we can conclude that there will be a decrease in the barrier potential.