When P-N junction diode is forward biased, then

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the depletion region is reduced and barrier height is increased

the depletion region is widened and barrier height is reduced

both the depletion region and barrier height are reduced

both the depletion region and barrier height are increased

answer is C.

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Detailed Solution

A P-N junction is forward bias, its P end is connected to positive terminal of battery while N end is connected to negative terminal of a battery. Under this condition, a greater number of electrons go from N-region to P-region and a greater number of holes go from P-region to N-region. Therefore, major current due to both types of carriers takes place through the junction. This causes a reduction in the height of depletion region. Moreover, the barrier potential is also reduced.

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