Questions
The barrier potential of a p-n junction depends on
- type of semiconductor material
- amount of doping
- temperature
which one of the following is correct?
a
(1) and (2) only
b
(2) only
c
(2) and (3) only
d
(1), (2) and (3)
detailed solution
Correct option is D
The barrier potential depends on type of semiconductor (For Si, vb= 0.7 and for Ge vb= 0.3), amount of doping and also on the temperature.Talk to our academic expert!
Similar Questions
In a pn junction diode, the thickness of depletion layer is 2 x 10-6m and barrier potential is 0.3v. The Intensity of the electric field at the junction is —
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