Questions
Consider the following statements A and B and identify the correct choice of the given answers.
A. The width of the depletion layer in a P-N junction diode increases in forward bias.
B. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap.
detailed solution
Correct option is C
In forward biasing of PN junction diode, width of depletion layer decreases. In intrinsic semiconductor, fermi energy level is exactly in the middle of the forbidden gapTalk to our academic expert!
Similar Questions
A potential barrier V volts exists across a P-N junction. The thickness of the depletion region is ‘d’. An electron with velocity 'v' approches P-N junction from N-side. The velocity of the electron acrossing the junction is
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