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Questions  

The contribution  in the total current flowing through  a semiconductor due to electrons and holes are ¾ and ¼ , respectively. If the drift velocity  of electrons is 5/2 times that  of  holes  at  this  temperature,   then  the  ratio  of concentration of electrons and holes is 

a
6 : 5
b
5 : 6
c
3 : 2
d
2 : 3

detailed solution

Correct option is A

As we know current density J = nqv⇒Je=neqve  and  Jh=nhqvh⇒JeJh=nenh×vevh⇒3/41/4=nenh×520⇒nenh=65

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In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m3 When doped with indium, the hole concentration increases to 4.5×1022m3 What is the electron concentration in doped silicon?


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