Questions
In dominant mechanisms for current due to charge carriers in forward and reverse biased p-n junctions are
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a
Drift in forward bias, Diffusion in reverse bias
b
Diffusion in forward bias, Drift in reverse bias
c
Diffusion in both forward and reverse bias
d
Drift in both forward and reverse bias
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Correct option is B
Diffusion in forward bias, Drift in reverse biasSimilar Questions
In a p-n junction the depletion region is 400nm wide and electric field of 5 x 105 Vm-1 exists in it. The minimum energy of a conduction electron, which can diffuse from n-side to the p-side is
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