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Questions  

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are, 

         

a
drift in forward bias, diffusions in reverse bias
b
diffusion in forward bias, drift in reverse bias
c
diffusion in both forward and reverse bias
d
drift in both forward and reverse bias

detailed solution

Correct option is B

In normal PN junction the net diffusion process stopped due to the barrier potential developed across the junction, but in forward bias majority charge carriers get energy from the biasing potential and starts diffusing. Where as, in reverse bias the electric field supports the barrier potential so the only cause of movement of charges is due to the electric field and minority charge carriers, constitute the current due to drift.

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