Questions
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are,
detailed solution
Correct option is B
In normal PN junction the net diffusion process stopped due to the barrier potential developed across the junction, but in forward bias majority charge carriers get energy from the biasing potential and starts diffusing. Where as, in reverse bias the electric field supports the barrier potential so the only cause of movement of charges is due to the electric field and minority charge carriers, constitute the current due to drift.Talk to our academic expert!
Similar Questions
A potential barrier V volts exists across a P-N junction. The thickness of the depletion region is ‘d’. An electron with velocity 'v' approches P-N junction from N-side. The velocity of the electron acrossing the junction is
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