Questions
Ge and Si diodes conduct at 0.3 V and 0.7 V respectively, if Ge and Si diode are reverse biased in turn, the value of changes by
detailed solution
Correct option is B
when Ge is conducting V0= 9.7V when Si is working V0= 9.3 v so difference is 0.4 VTalk to our academic expert!
Similar Questions
The diode used in the circuit has barrier voltage 0.5 V and maximum power rating is 10 mW. What should be the minimum value of resistance R connected in series with the diode
799 666 8865
support@infinitylearn.com
6th Floor, NCC Building, Durgamma Cheruvu Road, Vittal Rao Nagar, HITEC City, Hyderabad, Telangana 500081.
free study material
JEE Mock Tests
JEE study guide
JEE Revision Notes
JEE Important Questions
JEE Sample Papers
JEE Previous Year's Papers
NEET previous year’s papers
NEET important questions
NEET sample papers
NEET revision notes
NEET study guide
NEET mock tests
