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Questions  

For germanium crystal,the forbidden energy gap in joules is

a
1.12×10-19
b
1.76×10-19
c
1.6×10-19
d
Zero

detailed solution

Correct option is A

For Ge, Eg= 0.7 eV = 0.7 x 1.6 x 10-19 J = 1.12 x 10-19 J

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In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m3 When doped with indium, the hole concentration increases to 4.5×1022m3 What is the electron concentration in doped silicon?


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