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Given density of carrier is 1⋅6×1010/cm3, carrier mobilities for electron and holes at 300 K are 1500 and 500 cm2volt-sec, electronic charge =1602×1019C  Then the conductivity at 300 K of pure silicon is

a
2⋅18×10−6/Ω−cm
b
1⋅19×10−6/Ω−cm
c
5⋅13×10−6/Ω−cm
d
none of these

detailed solution

Correct option is C

σ=neμe+μh σ=1⋅6×1010×1⋅602×10−19[1500+500] =5.13×10−6/Ω−cm at 300K

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