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Questions  

Let nP and ne be the number  of holes  and conduction electrons respectively in a semiconductor. Then

a
nP > ne in an intrinsic semiconductor
b
nP = ne in an extrinsic semiconductor
c
nP = ne in an intrinsic semiconductor
d
ne > nP in an intrinsic semiconductor

detailed solution

Correct option is C

In intrinsic semiconductors, the creation or liberation of one free electron by the thermal energy creates one hole simultaneously.  Thus, in intrinsic semiconductors ne = nh.

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In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m3 When doped with indium, the hole concentration increases to 4.5×1022m3 What is the electron concentration in doped silicon?


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