Questions
and are the number of electrons and drift velocity in a semiconductor . When temperature is increased
detailed solution
Correct option is A
Because vd =i( ne )eATalk to our academic expert!
Similar Questions
In pure silicon at 300 K the electron and hole concentration is each equal to When doped with indium, the hole concentration increases to What is the electron concentration in doped silicon?
799 666 8865
support@infinitylearn.com
6th Floor, NCC Building, Durgamma Cheruvu Road, Vittal Rao Nagar, HITEC City, Hyderabad, Telangana 500081.
free study material
JEE Mock Tests
JEE study guide
JEE Revision Notes
JEE Important Questions
JEE Sample Papers
JEE Previous Year's Papers
NEET previous year’s papers
NEET important questions
NEET sample papers
NEET revision notes
NEET study guide
NEET mock tests
