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A n-type silicon sample of width $4 x 10^{- 3} m$ , thickness and length $6 \times 10^{- 2} m$ carriers a current of 4.8 mA, when the voltage is applied across the length of the sample. The free electron density is $10^{22} m^{- 3}$

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the current density is 20 A/m2

the drift speed is 1.25cm/s

the time taken by electrons to travel the full length of the sample is 4.8sec

all options are correct

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detailed solution

Correct option is D

Current density =iA=4.8×10−34×10−3×6×10−2=20A/m2Drift speed =Vd=iAne=201022×1.6×10−19=1.25×10−2m/sTime=t=lVd=6×10−21.25×10−2=4.8 sec

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A n-type silicon sample of width 4x10-3m, thickness and length 6×10-2 m carriers a current of 4.8 mA, when the voltage is applied across the length of the sample. The free electron density is 1022m-3

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Ready to Test Your Skills?

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A n-type silicon sample of width $4 x 10^{- 3} m$ , thickness and length $6 \times 10^{- 2} m$ carriers a current of 4.8 mA, when the voltage is applied across the length of the sample. The free electron density is $10^{22} m^{- 3}$