In a p-n junction diode made with Ge, the thickness of depletion layer is 2×10−6m and barrier potential is 0.3V. The strength of the electric field at the junction is
see full answer
Your Exam Success, Personally Taken Care Of
1:1 expert mentors customize learning to your strength and weaknesses – so you score higher in school , IIT JEE and NEET entrance exams.
An Intiative by Sri Chaitanya
a
0.6×10−6Vm−1from n to p side
b
0.6×10−6Vm−1from p to n side
c
1.5×105Vm−1from n to p side
d
1.5×105Vm−1from p to n side
answer is C.
(Unlock A.I Detailed Solution for FREE)
Best Courses for You
JEE
NEET
Foundation JEE
Foundation NEET
CBSE
Detailed Solution
Barrier Potential V=0.3 V thickness of depletion layer d=2×10−6 m E=vd =0.32×10−6 =1.5×105Vm−1from n to p side