In a $$p-n$$ junction diode made with Ge, the thickness of depletion layer is $$2$$×$$10$$−$$6m$$ and barrier potential is $$0.3V$$. The strength of the electric field at the junction is

Correct option is 31.5×105Vm−1from n to p side

Questions

In a p-n junction diode made with Ge, the thickness of depletion layer is $2 \times 10^{- 6} m$ and barrier potential is 0.3V. The strength of the electric field at the junction is

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0.6×10−6Vm−1from n to p side

0.6×10−6Vm−1from p to n side

1.5×105Vm−1from n to p side

1.5×105Vm−1from p to n side

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detailed solution

Correct option is C

Barrier Potential V=0.3 V thickness of depletion layer d=2×10−6 m E=vd =0.32×10−6 =1.5×105Vm−1from n to p side

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In a p-n junction diode made with Ge, the thickness of depletion layer is 2×10−6m and barrier potential is 0.3V. The strength of the electric field at the junction is

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In a p-n junction diode made with Ge, the thickness of depletion layer is $2 \times 10^{- 6} m$ and barrier potential is 0.3V. The strength of the electric field at the junction is