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Q.

In a p-n junction diode the thickness of depletion layer is 2×10−6m and barrier potential is 0.3 V. The intensity of the electrical field at the junction is

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a

0.6×106V/mfrom n to p side

b

0.6×106V/mfrom p to n side

c

1.5×105V/mfrom n to p side

d

1.5×105V/mfrom p to n side

answer is C.

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Detailed Solution

E=vd=0.32×10−6=1.5×105V/m
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