In a $$p-n$$ junction diode the thickness of depletion layer is $$2$$×$$10$$−$$6m$$ and barrier potential is $$0.3$$ V. The intensity of the electrical field at the junction is

Correct option is 31.5×105V/mfrom n to p side

Questions

In a p-n junction diode the thickness of depletion layer is $2 \times 10^{- 6} m$ and barrier potential is 0.3 V. The intensity of the electrical field at the junction is

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0.6×106V/mfrom n to p side

0.6×106V/mfrom p to n side

1.5×105V/mfrom n to p side

1.5×105V/mfrom p to n side

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detailed solution

Correct option is C

E=vd=0.32×10−6=1.5×105V/m

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In a p-n junction diode the thickness of depletion layer is 2×10−6m and barrier potential is 0.3 V. The intensity of the electrical field at the junction is

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In a p-n junction diode the thickness of depletion layer is $2 \times 10^{- 6} m$ and barrier potential is 0.3 V. The intensity of the electrical field at the junction is