In a p-n junction diode the thickness of depletion layer is $2\times {10}^{-6}m$ and barrier potential is 0.3 V. The intensity of the electrical field at the junction is

• A

  $0.6\times {10}^{6}V/m$from n to p side

• B

  $0.6\times {10}^{6}V/m$from p to n side

• C

  $1.5\times {10}^{5}V/m$from n to p side

• D

  $1.5\times {10}^{5}V/m$from p to n side