First slide

Diodes

Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

Easy

A

$6000 \overset{o}{A}$
B

$4000 n m$
C

$6000 n m$
D

$4960 \overset{o}{A}$

Solution

$W a v e l e n g t h : λ = \frac{h c}{e V} = \frac{12400}{E (i n e V)} = \frac{12400}{2.5} \overset{o}{A} = 4960 \overset{o}{A}$

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