Download the app

Questions  

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm2 and  thickness 0.5 mm. If the concentration of electrons in Ge is 2×1019/m3 and mobilities of electrons and holes are 0.36 m2volt-secand 0.14 m2volt-sec,respectively, then the current flowing through the plate will be

a
0.25 A
b
0.45 A
c
0.56 A
d
0.64 A

detailed solution

Correct option is D

σ=neμe+μh                                     ∵ne=nh=n=2×1019×1.6×10−190.36+0.14=1.6Ω−m−1R=ρLA=LσA=0.5×10−31.6×10−4=258Ω ∴i=VR=225/8=1625A=0.64A

Talk to our academic expert!

+91

Are you a Sri Chaitanya student?


Similar Questions

In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m3 When doped with indium, the hole concentration increases to 4.5×1022m3 What is the electron concentration in doped silicon?


phone icon
whats app icon