Download the app

Questions  

A pure Ge crystal has 3.0×1028 atoms/m3. It is doped by 1 part per 10 million concentration of trivalent Ga. The number density of electrons is (Given that  ni=1.5×1016/m3

a
3x1021/m3
b
7.5 x1010/m3
c
3.0 x1015/ m3
d
1.5 x1021 /m3

detailed solution

Correct option is B

no of holes due to impurity nh=3 x1028107= 3 x1021 nenh=ni2

Talk to our academic expert!

+91

Are you a Sri Chaitanya student?


Similar Questions

A silicon specimen is made into a P-type semi-conductor by doping, on an average, one indium atom per 5×107 silicon atoms. If the number density of atoms in the silicon specimen is 5×1028atoms m3, then the number of acceptor atoms in silicon per cubic centimetre will be


phone icon
whats app icon