Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5×1016 m-3. It is doped with 4.5×1022 m-3 Indium. Calculate ne in the doped Silicon
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a
5×1010 m-3
b
5×109m-3
c
3×106 m-3
d
3×107m-3
answer is B.
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Detailed Solution
for any extrinsic semiconductor ni2=nenh here ni=1.5×1016 m-3 and nh=4.5×1022 m-3ne=1.5×1016×1.5×10164.5×1022=5×109