Pure Si at 300 K has equal electron (ne) and hole (nh) concentration of 1.5×1016 m-3. It is doped with 4.5×1022 m-3 Indium. Calculate ne in the doped Silicon
5×1010 m-3
5×109m-3
3×106 m-3
3×107m-3
for any extrinsic semiconductor ni2=nenh here ni=1.5×1016 m-3 and nh=4.5×1022 m-3
ne=1.5×1016×1.5×10164.5×1022=5×109