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In pure silicon at 300 K the electron and hole concentration is each equal to $1.5 \times 10^{16} m^{- 3}$ When doped with indium, the hole concentration increases to $4.5 \times 10^{22} m^{- 3}$ What is the electron concentration in doped silicon?

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3×109m−3

4×109m−3

5×109m−3

6×109m−3

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detailed solution

Correct option is C

Given ni=1.5×1016m−3 and nh=4.5×1022m−3 Now, we know that nenh=ni2 or ne=ni2nh=1.5×101624.5×1022=5.0×109m−3

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In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m−3 When doped with indium, the hole concentration increases to 4.5×1022m−3 What is the electron concentration in doped silicon?

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In pure silicon at 300 K the electron and hole concentration is each equal to $1.5 \times 10^{16} m^{- 3}$ When doped with indium, the hole concentration increases to $4.5 \times 10^{22} m^{- 3}$ What is the electron concentration in doped silicon?