Q.

In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m−3 When doped with indium, the hole concentration increases to 4.5×1022m−3 What is the electron concentration in doped silicon?

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a

3×109m−3

b

4×109m−3

c

5×109m−3

d

6×109m−3

answer is C.

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Detailed Solution

Given ni=1.5×1016m−3 and nh=4.5×1022m−3  Now, we know that nenh=ni2 or ne=ni2nh=1.5×101624.5×1022=5.0×109m−3
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In pure silicon at 300 K the electron and hole concentration is each equal to 1.5×1016m−3 When doped with indium, the hole concentration increases to 4.5×1022m−3 What is the electron concentration in doped silicon?