Statement I: A $$P-N$$ photodiode is made from a semiconductor for which band gap Eg $$-$$ $$2.8$$ eV. This photodiode will not detect the wavelength of $$6000$$ nm.Statement II: A PN photodiode detect wavelength λ if energy of incident light, i.e., hcλEg. (Bandgap$$ of semiconductor from which photodiode in $$made)

Question

Statement I: A $$P-N$$ photodiode is made from a semiconductor for which band gap Eg $$-$$ $$2.8$$ eV. This photodiode will not detect the wavelength of $$6000$$ nm.Statement II: A PN photodiode detect wavelength λ if energy of incident light, i.e., hcλ>Eg. (Bandgap$$ of semiconductor from which photodiode in $$made)

Infinity Learn · Accepted Answer

For detection of a particular wavelength $$($$λ$$)$$ by a PN photodiode, energy of incident light >Eg⇒hcEg>λFor  $$Eg=28$$ eV, $$hcEg=6.6$$×$$10-34$$×$$3$$×$$1082.8$$×$$1.6$$×$$10-19=441.9$$ nm i.e., hcEg<$$6000$$ nm,  so diode will not detect the wavelength of $$6000$$ nm.

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