Q.

Statement I: A P-N photodiode is made from a semiconductor for which band gap Eg - 2.8 eV. This photodiode will not detect the wavelength of 6000 nm.Statement II: A PN photodiode detect wavelength λ if energy of incident light, i.e., hcλ>Eg. (Bandgap of semiconductor from which photodiode in made)

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a

Both statements I and II are correct.

b

Statement I is correct but statement II is incorrect

c

Statement I is incorrect but statement II is correct

d

Both statements I and II are incorrect.

answer is A.

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Detailed Solution

For detection of a particular wavelength (λ) by a PN photodiode, energy of incident light >Eg⇒hcEg>λFor  Eg=28 eV, hcEg=6.6×10-34×3×1082.8×1.6×10-19=441.9 nm i.e., hcEg<6000 nm,  so diode will not detect the wavelength of 6000 nm.
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Statement I: A P-N photodiode is made from a semiconductor for which band gap Eg - 2.8 eV. This photodiode will not detect the wavelength of 6000 nm.Statement II: A PN photodiode detect wavelength λ if energy of incident light, i.e., hcλ>Eg. (Bandgap of semiconductor from which photodiode in made)